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| DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFQ67T NPN 8 GHz wideband transistor Product specification Supersedes data of 1999 Nov 02 2000 Mar 06 Philips Semiconductors Product specification NPN 8 GHz wideband transistor FEATURES * High power gain * Low noise figure * High transition frequency * Gold metallization ensures excellent reliability * SOT416 (SC-75) envelope. APPLICATIONS Wideband applications such as satellite TV tuners and RF portable communications equipment up to 2 GHz. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT GUM F Note 1. Ts is the temperature at the soldering point of the collector pin. LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature Ts 75 C; note 1 CONDITIONS open emitter open base open collector - - - - - -65 - MIN. PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure Ts 75 C; note 1 CONDITIONS open emitter open base MIN. - - - - IC = 15 mA; VCE = 5 V; Tj = 25 C 60 IC = 15 mA; VCE = 8 V; f = 2 GHz; - Tamb = 25 C IC = 15 mA; VCE = 8 V; f = 1 GHz; - Tamb = 25 C IC = 5 mA; VCE = 8 V; f = 1 GHz - TYP. - - - - 100 8 13 1.3 PINNING PIN 1 2 3 base emitter collector Marking code: V2. BFQ67T DESCRIPTION NPN transistor in a plastic SOT416 (SC-75) package. fpage 3 DESCRIPTION 1 Top view 2 MBK090 Fig.1 SOT416. MAX. 20 10 50 150 - - - - UNIT V V mA mW GHz dB dB MAX. 20 10 2.5 50 150 +150 150 V V V UNIT mA mW C C 2000 Mar 06 2 Philips Semiconductors Product specification NPN 8 GHz wideband transistor THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point VALUE 500 BFQ67T UNIT K/W CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL ICBO hFE Cc Ce Cre fT GUM PARAMETER collector cut-off current DC current gain collector capacitance emitter capacitance feedback capacitance transition frequency maximum unilateral power gain CONDITIONS IE = 0; VCB = 5 V IC = 15 mA; VCE = 5 V IE = ie = 0; VCB = 8 V; f = 1 MHz IC = 0; VCE = 8 V; f = 1 MHz MIN. - 60 - - TYP. - 100 0.7 1.3 0.5 8 MAX. 50 - - - - - pF pF pF GHz UNIT nA IC = ic = 0; VEB = 0.5 V; f = 1 MHz - IC = 15 mA; VCE = 8 V; f = 2 GHz; - Tamb = 25 C IC = 15 mA; VCE = 8 V; Tamb = 25 C; note 1 f = 1 GHz f = 2 GHz - - - - - - - - 13 8 1.3 2.2 2 2.7 2.5 3 - - - - - - - - dB dB dB dB dB dB dB dB F noise figure s = opt; IC = 5 mA; VCE = 8 V; f = 1 GHz f = 2 GHz s = opt; IC = 15 mA; VCE = 8 V; f = 1 GHz f = 2 GHz VCE = 8 V; f = 2 GHz; Zs = 60 ; IC = 5 mA IC = 15 mA Note S 21 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log ---------------------------------------------------------- dB 2 2 ( 1 - S 11 ) ( 1 - S 22 ) 2 2000 Mar 06 3 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67T 200 Ptot (mW) 150 MGU068 MBB301 handbook, halfpage 120 h FE 80 100 40 50 0 0 50 100 150 Ts (C) 200 0 0 20 40 I C (mA) 60 VCE = 5 V; Tj = 25 C. Fig.3 Fig.2 Power derating curve. DC current gain as a function of collector current. handbook, halfpage 0.8 MRC039 handbook, halfpage 10 MBB303 Cre (pF) 0.6 fT (GHz) 8 6 0.4 4 0.2 2 0 0 0 4 8 VCB (V) 12 0 10 20 30 I C (mA) 40 IC = 0; f = 1 MHz. VCE = 8 V; f = 2 GHz; Tamb = 25 C. Fig.4 Feedback capacitance as a function of collector-base voltage. Fig.5 Transition frequency as a function of collector current. 2000 Mar 06 4 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67T In Figs 6 to 9, GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. MRC042 MRC040 handbook,20 halfpage handbook, halfpage 50 gain (dB) 15 MSG G max G UM gain (dB) 40 G UM 30 10 20 5 10 MSG G max 0 0 5 10 15 20 25 30 35 I C (mA) 0 10-2 10-1 1 f (GHz) 10 VCE = 8 V; f = 1 GHz; Tamb = 25 C. IC = 5 mA; VCE = 8 V; Tamb = 25 C. Fig.6 Gain as a function of collector current. Fig.7 Gain as a function of frequency. handbook, halfpage 50 gain (dB) 40 MRC041 handbook, halfpage 50 MRC043 gain (dB) G UM 40 G UM 30 MSG 20 G max 10 30 MSG 20 10 G max 0 10-2 10-1 1 f (GHz) 10 0 10-2 10-1 1 f (GHz) 10 IC = 15 mA; VCE = 8 V; Tamb = 25 C. IC = 30 mA; VCE = 8 V; Tamb = 25 C. Fig.8 Gain as a function of frequency. Fig.9 Gain as a function of frequency. 2000 Mar 06 5 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67T 4 handbook, halfpage F (dB) 3 MRC044 2 1 0 1 10 I C (mA) 102 VCE = 8 V; f = 1 GHz. Fig.10 Minimum noise figure as a function of collector current. handbook, full pagewidth 90 1.0 1 135 0.5 2 45 0.8 0.6 Fmin = 1.5 dB 0.2 opt 180 0 0.2 0.5 1 F = 2 dB F = 2.5 dB 0.2 F = 3 dB 5 2 5 0 0 5 0.4 0.2 0.5 -135 1 2 -45 MRC046 1.0 -90 IC = 5 mA; VCE = 8 V; f = 1 GHz; Zo = 50 . Fig.11 Noise circle. 2000 Mar 06 6 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67T handbook, full pagewidth 90 1.0 1 135 0.5 2 45 0.8 0.6 0.4 0.2 1 2 5 0 40 MHz 0.2 5 0 0.2 3 GHz 180 0 0.2 0.5 5 0.5 -135 1 2 -45 MRC047 1.0 -90 IC = 15 mA; VCE = 8 V; Zo = 50 . Fig.12 Common emitter input reflection coefficient (S11). handbook, full pagewidth 90 135 45 40 MHz 180 3 GHz 50 40 30 20 10 0 -135 -45 -90 IC = 15 mA; VCE = 8 V. MRC048 Fig.13 Common emitter forward transmission coefficient (S21). 2000 Mar 06 7 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67T handbook, full pagewidth 90 135 3 GHz 45 40 MHz 180 0 0.5 0.4 0.3 0.2 0.1 -135 -45 -90 IC = 15 mA; VCE = 8 V. MRC049 Fig.14 Common emitter reverse transmission coefficient (S12). handbook, full pagewidth 90 1.0 1 135 0.5 2 45 0.8 0.6 0.4 0.2 180 0 0.2 0.5 1 2 5 0 40 MHz 3 GHz 0.2 5 0 0.2 5 0.5 -135 1 2 -45 MRC050 1.0 -90 IC = 15 mA; VCE = 8 V; Zo = 50 . Fig.15 Common emitter output reflection coefficient (S22). 2000 Mar 06 8 Philips Semiconductors Product specification NPN 8 GHz wideband transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads BFQ67T SOT416 D B E A X vMA HE 3 Q A 1 e1 e bp 2 wM B A1 c Lp detail X 0 0.5 scale 1 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 0.95 0.60 A1 max 0.1 bp 0.30 0.15 c 0.25 0.10 D 1.8 1.4 E 0.9 0.7 e 1 e1 0.5 HE 1.75 1.45 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 OUTLINE VERSION SOT416 REFERENCES IEC JEDEC EIAJ SC-75 EUROPEAN PROJECTION ISSUE DATE 97-02-28 2000 Mar 06 9 Philips Semiconductors Product specification NPN 8 GHz wideband transistor DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values BFQ67T This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 2000 Mar 06 10 Philips Semiconductors Product specification NPN 8 GHz wideband transistor NOTES BFQ67T 2000 Mar 06 11 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V, Tel. +45 33 29 3333, Fax. +45 33 29 3905 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615 800, Fax. +358 9 6158 0920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 4099 6161, Fax. +33 1 4099 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 2353 60, Fax. +49 40 2353 6300 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI), Tel. +39 039 203 6838, Fax +39 039 203 6800 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW, Tel. +48 22 5710 000, Fax. +48 22 5710 001 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 58088 Newville 2114, Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SAO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye, ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 3341 299, Fax.+381 11 3342 553 For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 2000 Internet: http://www.semiconductors.philips.com SCA 69 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 603508/02/pp12 Date of release: 2000 Mar 06 Document order number: 9397 750 06716 |
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